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MRF372R3 mrf372r5 1 rf device data freescale semiconductor rf power field - effect transistor n - channel enhancement - mode lateral mosfet designed for broadband commercial and industrial applications with frequen- cies from 470 to 860 mhz. the high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 32 volt transmitter equipment. ? typical narrowband two - tone performance @ f1 = 857 mhz, f2 = 863 mhz, 32 volts output power ? 180 watts pep power gain ? 17 db efficiency ? 36% imd ? - 35 dbc ? typical broadband two - tone performance @ f1 = 857 mhz, f2 = 863 mhz, 32 volts output power ? 180 watts pep power gain ? 14.5 db efficiency ? 37% imd ? - 31 dbc ? capable of handling 3:1 vswr @ 32 vdc, 857 mhz, 90 watts cw output power features ? internally matched for ease of use ? integrated esd protection ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. r5 suffix = 50 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, +15 vdc drain current - continuous i d 17 adc total device dissipation @ t c = 25 c derate above 25 c p d 350 2.0 w w/ c storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 0.5 c/w table 3. esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) document number: mrf372 rev. 9, 5/2006 freescale semiconductor technical data 470 - 860 mhz, 180 w, 32 v lateral n - channel rf power mosfet case 375g - 04, style 1 ni - 860c3 MRF372R3 mrf372r5 ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor MRF372R3 mrf372r5 table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) drain - source breakdown voltage (v gs = 0 vdc, i d =10 a) v (br)dss 68 ? ? vdc zero gate voltage drain current (v ds = 32 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (1) (v ds = 10 v, i d = 200 a) v gs(th) 2 3 4 vdc gate quiescent voltage (2) (v ds = 32 v, i d = 100 ma) v gs(q) 2.5 3.5 4.5 vdc drain - source on - voltage (1) (v gs = 10 v, i d = 3 a) v ds(on) ? 0.28 0.45 vdc forward transconductance (v ds = 10 v, i d = 3 a) g fs ? 2.6 ? s dynamic characteristics (1) input capacitance (includes input matching capacitance) (v ds = 32 v, v gs = 0 v, f = 1 mhz) c iss ? 260 ? pf output capacitance (v ds = 32 v, v gs = 0 v, f = 1 mhz) c oss ? 69 ? pf reverse transfer capacitance (v ds = 32 v, v gs = 0 v, f = 1 mhz) c rss ? 2.5 ? pf functional characteristics, narrowband operation (2) (in freescale mrf372 narrowband circuit, 50 ohm system) common source power gain (v dd = 32 v, p out = 180 w pep, i dq = 800 ma, f1 = 857 mhz, f2 = 863 mhz) g ps 16 17 ? db drain efficiency (v dd = 32 v, p out = 180 w pep, i dq = 800 ma, f1 = 857 mhz, f2 = 863 mhz) 33 36 ? % intermodulation distortion (v dd = 32 vdc, p out = 180 w pep, i dq = 800 ma, f1 = 857 mhz, f2 = 863 mhz) imd ? -35 -31 dbc typical characteristics, broadband operation (2) (in freescale mrf372 broadband circuit, 50 ohm system) common source power gain (v dd = 32 vdc, p out = 180 w pep, i dq = 1000 ma, f1 = 857 mhz, f2 = 863 mhz) g ps ? 14.5 ? db drain efficiency (v dd = 32 vdc, p out = 180 w pep, i dq = 1000 ma, f1 = 857 mhz, f2 = 863 mhz) ? 37 ? % intermodulation distortion (v dd = 32 vdc, p out = 180 w pep, i dq = 1000 ma, f1 = 857 mhz, f2 = 863 mhz) imd ? -31 ? dbc 1. each side of device measured separately. 2. measurement made with device in push - pull configuration.
MRF372R3 mrf372r5 3 rf device data freescale semiconductor typical characteristics figure 1. capacitance versus voltage v ds , drain?source voltage (volts) , c iss , capacitance (pf) note: c iss does not include input matching capacitance. 0 50 100 150 200 0 5 10 15 20 0 102030405060 c oss c iss c rss c oss , capacitance (pf) c rss
4 rf device data freescale semiconductor MRF372R3 mrf372r5 figure 2. 860 mhz narrowband dc bias networks v gg v dd l4 r4 r5 l2 r3 gate drain l3 r1 c5 c3 + r2 l1 c8 c7 c12 c10 table 5. 860 mhz narrowband dc bias networks component designations and values designation description c1 f, 22 v tantalum chip capacitors, kemet #t491d226k22as f, 100 v chip capacitors, vitramon #vj3640y105kxbat f, 100 v chip capacitors, vitramon #vj3640y225kxbat f, 100 v chip capacitors, kemet #vj1210y103kxbat r1a, b, r2a, b r4a, b, r5a, b 180 , 1/4 w chip resistors, vishay dale (1210) , 1/8 w chip resistors, vishay dale (1206) r = 3.48 balun a, b vertical 860 mhz broadband balun, printed circuit board rev 01, rogers ro3010, height 50 mils, r = 10.2
MRF372R3 mrf372r5 5 rf device data freescale semiconductor r4b pcb substrate (30 mil thick) motorola vertical 860 mhz balun rogers ro3010 (50 mil thick) 55 mil slot cut out to accept balun input (50 ohm microstrip) output 2 (12.5 ohm microstrip) ground vertical balun mounting detail note: trim balun pcb so that a 35 mil "tab" fits into the main pcb slot" resulting in balun solder pads being level with the pcb substrate solder pads when fully inserted. output 1 (12.5 ohm microstrip) mrf372 rev 1a c9 r1a c3a r2a c3b l1b r2b r1b c10b c10a c1 c2 c4a c4b r3a c6 c11 c13 l4b l4a c8a c14a c15 r3b c14b c8b l2b l2a l1a c5a l3b c5b c7a c7b c12a r5a r4a c12b r5b figure 3. 860 mhz narrowband component layout l3a freescale has begun the transition of marking printed circuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
6 rf device data freescale semiconductor MRF372R3 mrf372r5 typical two - tone narrowband characteristics figure 4. cofdm performance (860 mhz) p out , output power (watts) avg. figure 5. 8 - vsb performance (860 mhz) p out , output power (watts) avg. figure 6. power gain versus output power p out , output power (watts) pep figure 7. intermodulation distortion versus output power p out , output power (watts) pep figure 8. drain efficiency versus output power p out , output power (watts) pep 0 5 10 15 20 25 30 35 ?50 ?45 ?40 ?35 ?30 ?25 ?20 ?15 10 100 5 10 15 20 25 30 35 40 ?50 ?45 ?40 ?35 ?30 ?25 ?20 ?15 10 100 10 12 14 16 18 20 10 100 ?50 ?45 ?40 ?35 ?30 ?25 ?20 ?15 ?10 10 100 5 10 15 20 25 30 35 40 45 10 100 v dd = 32 vdc i dq = 800 ma f1 = 857 mhz f2 = 863 mhz d , drain efficiency (%) 800 ma i dq = 400 ma 1.2 a v dd = 32 vdc f1 = 857 mhz f2 = 863 mhz imd, intermodulation distortion (dbc) 1.6 a 800 ma 1.2 a v dd = 32 vdc f1 = 857 mhz f2 = 863 mhz i dq = 1600 ma g ps , power gain (db) imr, intermodulation ratio (db) , drain efficiency (%) g ps , power gain (db) imr g ps , drain efficiency (%) g ps , power gain (db) imr, intermodulation ratio (db) imr g ps v dd = 32 vdc i dq = 1600 ma 6 db peak/avg. ratio 400 ma v dd = 32 vdc i dq = 1600 ma 2 k mode 64 qam 10 db peak/avg. ratio note: imr measured using delta marker method. note: imr measured using delta marker method.
MRF372R3 mrf372r5 7 rf device data freescale semiconductor figure 9. narrowband series equivalent source and load impedance f mhz z source z load 845 860 875 3.99 - j2.50 3.18 - j1.46 3.56 - j1.98 5.63 + j0.38 5.28 + j0.43 4.94 + j0.56 v dd = 32 v, i dq = 800 ma, p out = 180 w pep f ghz z source z load 1.69 1.72 1.75 2.85 + j14.30 1.23 + j9.37 1.54 + j9.60 1.73 + j9.62 harmonics 3.27 + j14.32 3.35 + j14.36 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. z source z load input matching network device under test output matching network ? ?+ + z source z load f = 845 mhz f = 845 mhz f = 875 mhz z o = 10 f = 875 mhz
8 rf device data freescale semiconductor MRF372R3 mrf372r5 + figure 10. 470 - 860 mhz broadband dc bias networks v gg v dd l3 r9a r9b r5 gate drain l2 r6 c9 r7 c7 c18 c17 c16 c8 r2 r3 r4t + table 6. 470 - 860 mhz broadband dc bias networks component designations and values designation description c1 f, 22 v tantalum chip capacitors, kemet #t491d226k22as f, 100 v chip capacitors, vitramon #vj3640y104kxbat f, 35 v tantalum chip capacitors, kemet #t491d106k35as f, 100 v chip capacitors, vitramon #vj3640y335kxbat f chip capacitors, atc , 1/4 w chip resistors, vishay dale (1210) , 1/4 w chip resistors, vishay dale (1210) , 1/8 w chip resistors, vishay dale (1206) , thermistor, vishay #nths?1206j14520r5% , 1/4 w chip resistors, vishay dale (1210) , 1/4 w chip resistors, vishay dale (1210) potentiometer, bourns , 1/8 w chip resistor, vishay dale (1206) , 1/4 w chip resistors, vishay dale (1210) pcb mrf372 printed circuit board rev 1a, rogers ro4350, height 30 mils, r = 3.48 balun a, b vertical 660 mhz broadband balun, printed circuit board rev 01, rogers ro3010, height 50 mils, r = 10.2
MRF372R3 mrf372r5 9 rf device data freescale semiconductor mrf372 l1a c5 c10 c11 r6a c8a r9a r4ta r3a l2a c15a l3a c16a l1b c14b l2b c15b c16b c14a r6b c14d c12 c13 l3c c17b r3b r2b c1 c3a c3b c4 c6 c7a c7b r4tb r1b r5a r5b r7 r1a c14c c2 c9a c9b r8 r9c r10a r10b c18a c18b c17a r9b c8b r2a l3b r9d rev. 1a figure 11. 470 - 860 mhz broadband component layout pcb substrate (30 mil thick) motorola vertical 660 mhz balun rogers ro3010 (50 mil thick) 55 mil slot cut out to accept balun input (50 ohm microstrip) output 2 (12.5 ohm microstrip) ground vertical balun mounting detail note: trim balun pcb so that a 35 mil tab" fits into the main pcb slot" resulting in balun solder pads being level with the pcb substrate solder pads when fully inserted. output 1 (12.5 ohm microstrip) freescale has begun the transition of marking printed circuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
10 rf device data freescale semiconductor MRF372R3 mrf372r5 typical two - tone broadband characteristics p out , output power (watts) pep 10 12 14 16 18 20 10 100 figure 12. power gain versus output power figure 13. intermodulation distortion versus output power p out , output power (watts) pep figure 14. drain efficiency versus output power p out , output power (watts) pep g ps = 660 mhz v dd = 32 vdc i dq = 1000 ma f1 ? f2 = 6 mhz ?50 ?45 ?40 ?35 ?30 ?25 ?20 ?15 ?10 10 100 5 10 15 20 25 30 35 40 45 10 100 imd, intermodulation distortion (dbc) g ps , power gain (db) , drain efficiency (%) 860 mhz 470 mhz 660 mhz v dd = 32 vdc i dq = 1000 ma f1 ? f2 = 6 mhz 860 mhz imd = 470 mhz 660 mhz v dd = 32 vdc i dq = 1000 ma f1 ? f2 = 6 mhz d = 860 mhz 470 mhz d
MRF372R3 mrf372r5 11 rf device data freescale semiconductor figure 15. broadband series equivalent source and load impedance f mhz z source z load 470 560 660 4.46 - j2.57 7.84 + j0.14 6.40 + j1.06 4.88 - j3.50 5.45 - j0.07 8.13 + j0.73 v dd = 32 v, i dq = 1000 ma, p out = 180 w pep 760 860 6.25 + j0.31 6.67 + j0.46 8.27 - j1.00 7.52 + j0.02 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. z source z load input matching network device under test output matching network ? ?+ + z o = 10 z source f = 470 mhz f = 860 mhz z load z o = 10 f = 470 mhz f = 860 mhz
12 rf device data freescale semiconductor MRF372R3 mrf372r5 notes
MRF372R3 mrf372r5 13 rf device data freescale semiconductor notes
14 rf device data freescale semiconductor MRF372R3 mrf372r5 notes
MRF372R3 mrf372r5 15 rf device data freescale semiconductor package dimensions case 375g - 04 issue g 1 2 34 5 d q g l k 2x h e f c seating plane notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. dimension h to be measured 0.030 (0.762) away from package body. 4. recommended bolt center dimension of 1.140 (28.96) based on 3m screw. 4x b a t dim a min max min max millimeters 1.335 1.345 33.91 34.16 inches b 0.380 0.390 9.65 9.91 c 0.180 0.224 4.57 5.69 d 0.325 0.335 8.26 8.51 e 0.060 0.070 1.52 1.78 f 0.004 0.006 0.10 0.15 g h 0.097 0.107 2.46 2.72 k 0.135 0.165 3.43 4.19 l n 0.851 0.869 21.62 22.07 q 0.118 0.138 3.00 3.30 r 0.395 0.405 10.03 10.29 style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source 1.100 bsc 0.425 bsc 27.94 bsc 10.8 bsc j 0.2125 bsc 5.397 bsc m 0.852 0.868 21.64 22.05 s 0.394 0.406 10.01 10.31 bbb 0.010 ref 0.25 ref ccc 0.015 ref 0.38 ref m a m bbb b m t m a m bbb b m t b (flange) 4x m a m bbb b m t m a m ccc b m t r (lid) s (insulator) j m a m bbb b m t m a m ccc b m t n (lid) m (insulator) a 4 ni - 860c3
16 rf device data freescale semiconductor MRF372R3 mrf372r5 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf372 rev. 9, 5/2006

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